| PART |
Description |
Maker |
| MMFT2406T1G MMFT2406T3 MMFT2406T3G MMFT2406T1 |
Power MOSFET 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 700 mA, 240 Volts
|
ONSEMI[ON Semiconductor]
|
| MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217 |
MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| BSP89-TAPE-13 BSP89-TAPE-7 |
0.35 A, 240 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| MRF377R5 MRF377R3 MRF377 |
MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| TN2404K TN2404KL TN2404KL-TR1 TN2404K-T1 BS107KL B |
N-Channel 240 -V (D-S) MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SPX2920U-3.3 SPX2920U3-3.3 SPX2920U3-5.0 SPX2920U5 |
320 x 240 pixel format, CFL backlight available with power harness
240 x 64 pixel format, CFL, LED, or EL Backlight available
400mA Low Drop Out Voltage Regulator with Shutdown, 1%
|
SIPEX[Sipex Corporation]
|
| BSS129E-6296 |
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS A G
|
| Z1SMA47 Z1SMA75 Z1SMA1 Z1SMA10 Z1SMA100 Z1SMA11 Z1 |
Surface mount Silicon-Zener Diodes (non-planar technology)
320 x 240 pixel format, Mechanical drop in to AGM3224S 43 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
320 x 240 pixel format, CFL backlight available with power harness 56 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
240 x 64 pixel format, LED, or EL Backlight available 17.95 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
320 x 240 pixel format, CFL backlight available with power harness 68 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| CM100TU-12H |
240 x 128 pixel format, CFL Backlight with power harness
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| APT5024BVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8024B2VR APT8024LVR |
POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
|
